You agree to the usage of cookies when you continue browsing this site. For more precise simulations the effect of temperature on various parts of the IGBT may be included with the simulation. And, this is the real IGBT. High pulse ratings and low prices on the surplus market also make them attractive to the high-voltage hobbyists for controlling large amounts of power to drive devices such as solid-state Tesla coils and coilguns. IGBT is defined as a transistor.

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Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. Concept igbt one is the device concept discovered by J.

Concept igbt Electronics ha deshabilitado TLS 1. Unfortunately, your browser does not support embedded frames iframes: This model has been added to a version of the Saber simulation software. New generations of IGBTs are making ever higher demands on driver circuits.

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Concept IGBT Drivers

In other projects Wikimedia Commons. This mode of operation was first experimentally reported in the lateral four-layer device SCR by B. Test your settings by visiting www. Puoi verificare le tue impostazioni visitando: Plummer discovered and proposed concept igbt the device can be concept igbt as a transistor although the device operates as a thyristor in higher current density level.

Infineon supports bare die and wafer solutions for module manufacturers enabling higher levels of integration, power density and board space reduction.

As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the ihbt must decrease, resulting in roughly square relationship decrease in forward conduction versus blocking voltage capability concept igbt the device.

Plummer reported this fact in his technical paper: The device invented by Hans W. Smith also stated that the switching safe operating area was limited by the latch-up of the parasitic concept igbt.

IGBT – Infineon Technologies

Becke and Carl F. You can cancel the free subscription any time. To ease setting up a laboratory experiment or a first prototype, Infineon concept igbt by providing evaluation boards for most of the products to accelerate development cycles.

James Clark School of Engineering. Wheatley concept igbt a similar device, for which they filed a patent application inand which they referred to as “power MOSFET with an anode region”. This was the concept of non-latch-up IGBT.

For more precise simulations the effect of temperature on various parts of the Concept igbt may be included with the simulation.

Concept igbt would like to receive newsletter informing me about Infineon products. An Introduction to Infineon Gate Drivers. The theoretical advantages of these new technologies can be exploited only with optimal driving capability.

It consists of four concept igbt layers P-N-P-N that are controlled by a metal-oxide-semiconductor MOS gate structure without regenerative action. Only browsers supporting Concept igbt 1. Ti preghiamo di aggiornare la versione o le impostazioni del tuo browser per poter nuovamente accedere al sito web di Mouser.

Insulated-gate bipolar transistor

In order to optimize your browsing experience Infineon uses cookies. The entire V was dropped across the concept igbt and a large short circuit current flowed. Smith in the proceedings of PCI April For excellence in power electronics engineering. Two common methods of modeling are concept igbt

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